Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique

Asamira Suzuki, Songbeak Choe, Yasuhiro Yamada, Shuichi Nagai, Miori Hiraiwa, Nobuyuki Otsuka, Daisuke Ueda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In this paper, we present a normally-off GaN-based transistor with extremely low on-state resistance fabricated by using Ge-doped n++GaN layer for ohmic contact. We developed a new GaN regrowth technique using Ge, which achieved extremely high doping level of 1 × 1020 cm-3, and thereby the lowest specific contact resistance of 1.5 × 10-6 Ω·cm2. Selectively deposited NiO gate using Atomic Layer Deposition (ALD) technique contributed to shorten the spacing between source and drain, making normally-off characteristics even with the 30% Al mole fraction of AlGaN. The fabricated device showed the record-breaking Ron of 0.95 Ω·mm with maximum drain current (Id,MAX) and transconductance (gm) of 1.1 A/mm and 490 mS/mm, respectively. It is noted that the obtained Vth was 0.55 V. An on/off current ratio of 5 × 106 is also achieved.

Original languageEnglish
Title of host publication2014 IEEE International Electron Devices Meeting, IEDM 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages11.1.1-11.1.4
Volume2015-February
EditionFebruary
ISBN (Electronic)9781479980017
ISBN (Print)9781479980000
DOIs
StatePublished - 20 Feb 2015
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 15 Dec 201417 Dec 2014

Conference

Conference2014 60th IEEE International Electron Devices Meeting, IEDM 2014
CountryUnited States
CitySan Francisco
Period15/12/1417/12/14

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    Suzuki, A., Choe, S., Yamada, Y., Nagai, S., Hiraiwa, M., Otsuka, N., & Ueda, D. (2015). Extremely low on-resistance enhancement-mode GaN-based HFET using Ge-doped regrowth technique. In 2014 IEEE International Electron Devices Meeting, IEDM 2014 (February ed., Vol. 2015-February, pp. 11.1.1-11.1.4). [7047029] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2014.7047029