Extremely high mobility ultra-thin metal-oxide with ns2np2 configuration

C. W. Shih, Albert Chin, Chun Fu Lu, S. H. Yi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

To increase the transistor's current (ION) and decrease the off-state leakage (IOFF), high-mobility, wide-bandgap and ultra-thin body channel materials are crucial for display, sub-10 nm MOSFET, and brain-mimicking 3D IC. The wide-bandgap ultra-thin-film SnO2 nMOSFET has achieved a high ION/IOFF of >107, and high mobility of > 0.5X SiO2/Si device value operated at 1 MV/cm. The high mobility TFT is due to the overlapped orbitals.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages6.6.1-6.6.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - 16 Feb 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 7 Dec 20159 Dec 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Conference

Conference61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period7/12/159/12/15

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    Shih, C. W., Chin, A., Lu, C. F., & Yi, S. H. (2015). Extremely high mobility ultra-thin metal-oxide with ns2np2 configuration. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 6.6.1-6.6.4). [7409642] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409642