Extreme ultra-violate exposure induced damages on non-volatile memories

Bing-Yue Tsui*, Chih Chan Yen, Po Hsueh Li, Chih Pei Lu, Jui Yao Lai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride -Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better EUV radiation tolerance than the SONOS memory. This work suggests that the EUV lithography could be a potential solution for advanced NC memories without reliability issue.

Original languageEnglish
Title of host publication2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs
StatePublished - 22 Oct 2010
Event2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States
Duration: 13 Jun 201014 Jun 2010

Publication series

Name2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference2010 15th Silicon Nanoelectronics Workshop, SNW 2010
CountryUnited States
CityHonolulu, HI
Period13/06/1014/06/10

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