Extreme ultra-violate exposure induced damages on non-volatile memories

Bing-Yue Tsui; Chih Chan Yen; Po Hsueh Li; Chih Pei Lu; Jui Yao Lai

doi:10.1109/SNW.2010.5562552

Extreme ultra-violate exposure induced damages on non-volatile memories

Bing-Yue Tsui^*, Chih Chan Yen, Po Hsueh Li, Chih Pei Lu, Jui Yao Lai

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride -Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better EUV radiation tolerance than the SONOS memory. This work suggests that the EUV lithography could be a potential solution for advanced NC memories without reliability issue.

Original language	English
Title of host publication	2010 Silicon Nanoelectronics Workshop, SNW 2010
DOIs	https://doi.org/10.1109/SNW.2010.5562552
State	Published - 22 Oct 2010
Event	2010 15th Silicon Nanoelectronics Workshop, SNW 2010 - Honolulu, HI, United States Duration: 13 Jun 2010 → 14 Jun 2010

Publication series

Name	2010 Silicon Nanoelectronics Workshop, SNW 2010

Conference

Conference	2010 15th Silicon Nanoelectronics Workshop, SNW 2010
Country	United States
City	Honolulu, HI
Period	13/06/10 → 14/06/10

Access to Document

10.1109/SNW.2010.5562552

Fingerprint Dive into the research topics of 'Extreme ultra-violate exposure induced damages on non-volatile memories'. Together they form a unique fingerprint.

Cite this

@inproceedings{9d27716119a541a4a84f975a50fb0af2,

title = "Extreme ultra-violate exposure induced damages on non-volatile memories",

abstract = "The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride -Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better EUV radiation tolerance than the SONOS memory. This work suggests that the EUV lithography could be a potential solution for advanced NC memories without reliability issue.",

author = "Bing-Yue Tsui and Yen, {Chih Chan} and Li, {Po Hsueh} and Lu, {Chih Pei} and Lai, {Jui Yao}",

year = "2010",

month = oct,

day = "22",

doi = "10.1109/SNW.2010.5562552",

language = "English",

isbn = "9781424477272",

series = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

booktitle = "2010 Silicon Nanoelectronics Workshop, SNW 2010",

note = "null ; Conference date: 13-06-2010 Through 14-06-2010",

}

TY - GEN

T1 - Extreme ultra-violate exposure induced damages on non-volatile memories

AU - Tsui, Bing-Yue

AU - Yen, Chih Chan

AU - Li, Po Hsueh

AU - Lu, Chih Pei

AU - Lai, Jui Yao

PY - 2010/10/22

Y1 - 2010/10/22

N2 - The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride -Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better EUV radiation tolerance than the SONOS memory. This work suggests that the EUV lithography could be a potential solution for advanced NC memories without reliability issue.

AB - The impact of extreme ultra-violate (EUV) exposure induced damages on the characteristics of Si-Oxide-Nitride -Oxide-Si (SONOS) memory and nano-crystal (NC) memory are investigated. In SONOS memory, the erase speed slows down and the endurance degrades severely due to the EUV induced deep-level traps in the dielectric stack and can not recover after 600°C annealing. The NC memory exhibits much better EUV radiation tolerance than the SONOS memory. This work suggests that the EUV lithography could be a potential solution for advanced NC memories without reliability issue.

UR - http://www.scopus.com/inward/record.url?scp=77957993891&partnerID=8YFLogxK

U2 - 10.1109/SNW.2010.5562552

DO - 10.1109/SNW.2010.5562552

M3 - Conference contribution

AN - SCOPUS:77957993891

SN - 9781424477272

T3 - 2010 Silicon Nanoelectronics Workshop, SNW 2010

BT - 2010 Silicon Nanoelectronics Workshop, SNW 2010

Y2 - 13 June 2010 through 14 June 2010

ER -

Extreme ultra-violate exposure induced damages on non-volatile memories

Abstract

Publication series

Conference

Access to Document

Other files and links

Cite this