Extraction of Ultra-Low Contact Resistivity by End-Resistance Method

Bing-Yue Tsui, Ya Hsin Lee, Dong Ying Wu, Yao Jen Lee, Mei Yi Li

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Accuracy of extracting ultra-low contact resistivity by the end-resistance method is evaluated. As the contact length becomes smaller than the transfer length, the end-resistance approaches the contact resistance, and the error decreases with the reduction of contact length and contact resistivity. The contact resistivity lower than 10{-9}Ω-\mathrm{c}\mathrm{m}{2} can be extracted with accuracy lower than 3× 10{-10}Ω-\mathrm{c}\mathrm{m}{2}. This end-resistance method is verified by self-aligned transmission line model test structure. Statistic analysis of the distribution of contact resistance and the uniformity of the contact interface are also demonstrated.

Original languageEnglish
Title of host publication2020 IEEE 33rd International Conference on Microelectronic Test Structures, ICMTS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728140087
DOIs
StatePublished - May 2020
Event33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020 - Edinburgh, United Kingdom
Duration: 4 May 202018 May 2020

Publication series

NameIEEE International Conference on Microelectronic Test Structures
Volume2020-May

Conference

Conference33rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2020
CountryUnited Kingdom
CityEdinburgh
Period4/05/2018/05/20

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