Extraction of front and buried oxide interface trap densities in fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Jen Yuan Cheng, Chun Wing Yeung, Chen-Ming Hu

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

In this letter, a method is proposed and demonstrated for the first time to characterize and decouple the interface traps of both the frontand back channels of fully-depleted silicon-on-insulator (FD-SOI) metal-oxide- semiconductor field-effect transistor (MOSFET).We report the procedure and the underlying theory that allows the extraction of the energy profiles of the densities of the interface traps (Dit).This technique will be very useful for evaluating the interface qualities of future FD-SOI transistors.

Original languageEnglish
JournalECS Solid State Letters
Volume2
Issue number5
DOIs
StatePublished - 26 Jul 2013

Fingerprint Dive into the research topics of 'Extraction of front and buried oxide interface trap densities in fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor'. Together they form a unique fingerprint.

Cite this