Extraction of electrical mechanisms of low-dielectric constant material MSZ for interconnect applications

T. C. Chang*, S. T. Yan, Po-Tsun Liu, Z. W. Lin, H. Aoki, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

8 Scopus citations

Abstract

In this paper, electrical characterization of low-k dielectric methyl-silsesquiazane (MSZ) is presented. Thermal stress and bias temperature stress (BTS) were utilized to evaluate the impact of Cu penetration on dielectric properties. In the investigation of thermal stress performed by furnace annealing, the leakage mechanism of Al- and Cu-gate MIS capacitors is competed by the decrease of the interfacial states between metal and dielectric and the increase of defects resulted from Cu penetration. Also, the leakage conduction mechanism at high electric field is deduced from Schottky emission in conjunction with space-charge-limited current conduction (SCLC) through BTS methods.

Original languageEnglish
Pages (from-to)516-523
Number of pages8
JournalThin Solid Films
Volume447-448
DOIs
StatePublished - 30 Jan 2004
EventProceedings of the 30th International Conference on Metallurgie - San Diego, CA, United States
Duration: 28 Apr 20022 May 2002

Keywords

  • Bias temperature stress
  • Low-k
  • MSZ
  • Schottky emission
  • Space charge limited current
  • Thermal stress

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