Extraction efficiency enhancement of GaN-based light-emitting diodes by microhole array and roughened surface oxide

Fang I. Lai*, S. C. Ling, C. E. Hsieh, T. H. Hsueh, Hao-Chung Kuo, Tien-chang Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The light-output power of GaN-based light-emitting diodes (LEDs) was enhanced by microhole array pattern and roughened GaOχ film grown on the exposed surface. The GaOχ film was grown by photoelectrochemical (PEC) oxidation via H2O and formed a naturally rough oxide surface and GaOχ/GaN interface. Compared with that of conventional broad-area LEDs, the output power of the microhole array LED and the surface-oxidized microhole array LED increased by 1.38 and 1.82 times at 20-mA forward current, respectively. The results show that the microhole array pattern with the roughened surface oxide method could significantly enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.

Original languageEnglish
Article number4814513
Pages (from-to)496-498
Number of pages3
JournalIEEE Electron Device Letters
Volume30
Issue number5
DOIs
StatePublished - May 2009

Keywords

  • Extraction efficiency
  • GaN
  • Light-emitting diode (LED)
  • Photoelectrochemical (PEC)

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