Extensive analysis of the degradation of blu-ray laser diodes

Matteo Meneghini, Gaudenzio Meneghesso*, Nicola Trivellin, Enrico Zanoni, Kenji Orita, Masaaki Yuri, Daisuke Ueda

*Corresponding author for this work

Research output: Contribution to journalArticle

34 Scopus citations

Abstract

This letter describes an analysis of the degradation of InGaN-based laser diodes. The influence of current, temperature, and optical power level on the degradation kinetics has been analyzed by means of a wide set of stress tests carried out under different operating conditions. We demonstrate the following: 1) the degradation rate is strongly related to the operating current level; 2) high-temperature stress does not determine significant degradation of lasers characteristics; and 3) the intensity of the optical field does not significantly influence the degradation rate. Degradation process is found to be electrothermally activated and is ascribed to the increase of the nonradiative recombination rate in the active layer, with subsequent decrease of the efficiency of the devices.

Original languageEnglish
Pages (from-to)578-581
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number6
DOIs
StatePublished - 1 Jun 2008

Keywords

  • Degradation
  • Gallium nitride
  • Laser diode (LD)
  • Reliability

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    Meneghini, M., Meneghesso, G., Trivellin, N., Zanoni, E., Orita, K., Yuri, M., & Ueda, D. (2008). Extensive analysis of the degradation of blu-ray laser diodes. IEEE Electron Device Letters, 29(6), 578-581. https://doi.org/10.1109/LED.2008.921098