Extension of BSIM3 model incorporating velocity overshoot

Dennis Sinitsky; Fariborz Assaderaghi; Michael Orshansky; Jeffrey Bokor; Chen-Ming Hu

doi:10.1109/VTSA.1997.614916

Extension of BSIM3 model incorporating velocity overshoot

Dennis Sinitsky^*, Fariborz Assaderaghi, Michael Orshansky, Jeffrey Bokor, Chen-Ming Hu

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for I_d looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.

Original language	English
Pages	307-310
Number of pages	4
DOIs	https://doi.org/10.1109/VTSA.1997.614916
State	Published - 1 Jan 1997
Event	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China Duration: 3 Jun 1997 → 5 Jun 1997

Conference

Conference	Proceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
City	Taipei, China
Period	3/06/97 → 5/06/97

Access to Document

10.1109/VTSA.1997.614916

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title = "Extension of BSIM3 model incorporating velocity overshoot",

abstract = "In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for Id looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.",

author = "Dennis Sinitsky and Fariborz Assaderaghi and Michael Orshansky and Jeffrey Bokor and Chen-Ming Hu",

year = "1997",

month = jan,

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doi = "10.1109/VTSA.1997.614916",

language = "English",

pages = "307--310",

note = "null ; Conference date: 03-06-1997 Through 05-06-1997",

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AU - Sinitsky, Dennis

AU - Assaderaghi, Fariborz

AU - Orshansky, Michael

AU - Bokor, Jeffrey

AU - Hu, Chen-Ming

PY - 1997/1/1

Y1 - 1997/1/1

N2 - In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for Id looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.

AB - In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for Id looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.

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U2 - 10.1109/VTSA.1997.614916

DO - 10.1109/VTSA.1997.614916

M3 - Paper

AN - SCOPUS:0030702453

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EP - 310

Y2 - 3 June 1997 through 5 June 1997

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