Extension of BSIM3 model incorporating velocity overshoot

Dennis Sinitsky*, Fariborz Assaderaghi, Michael Orshansky, Jeffrey Bokor, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper velocity overshoot in Si inversion layers is studied. A simple analytical MOS current drive model that takes velocity overshoot into account is deduced and verified with an energy transport simulator as well as experimental data. The formula for Id looks very much like the conventional BSIM3 expression. Device scaling based on the model is studied. A new mechanism of MOSFET output conductance due to velocity overshoot is identified.

Original languageEnglish
Pages307-310
Number of pages4
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications - Taipei, China
Duration: 3 Jun 19975 Jun 1997

Conference

ConferenceProceedings of the 1997 International Symposium on VLSI Technology, Systems, and Applications
CityTaipei, China
Period3/06/975/06/97

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