Extended microtunnels in GaN prepared by wet chemical etch

Hsin Hsiung Huang*, Hung Yu Zeng, Chi Ling Lee, Shih Chang Lee, Wei-I Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

It is demonstrated in GaN that microtunnels extended beyond hundreds of microns can be easily achieved using wet chemical etch. To obtain this result, specially designed structures of GaN layers are first grown on sapphire substrates with metal-organic chemical vapor deposition and subsequently with hydride vapor phase epitaxy techniques. The prepared samples are then chemically etched in molten KOH. With the designed structure of GaN layers, extended microtunnels with triangular cross sections are formed. The crystallographic planes of the triangular bevels belong to the {11 2- 2} family. The etch rate of the tunnel can be as high as 10 μmmin at proper etching conditions.

Original languageEnglish
Article number202115
JournalApplied Physics Letters
Volume89
Issue number20
DOIs
StatePublished - 23 Nov 2006

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