Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer

Yi Lin Tsai; Sheng Kai Huang; Huang Hsiung Huang; Shu Mei Yang; Kai Ling Liang; Wei Hung Kuo; Yen Hsiang Fang; Chih I. Wu; Shou Wei Wang; Hsiang Yun Shih; Zhiyu Xu; Minkyu Cho; Shyh Chiang Shen; Chien Chung Lin

doi:10.1109/JPHOT.2020.3037220

Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer

Yi Lin Tsai, Sheng Kai Huang, Huang Hsiung Huang, Shu Mei Yang, Kai Ling Liang, Wei Hung Kuo, Yen Hsiang Fang, Chih I. Wu, Shou Wei Wang, Hsiang Yun Shih, Zhiyu Xu, Minkyu Cho, Shyh Chiang Shen, Chien Chung Lin^*

^*Corresponding author for this work

Institute of Photonic System

Research output: Contribution to journal › Article › peer-review

Abstract

We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.

Original language	English
Article number	9256288
Journal	IEEE Photonics Journal
Volume	12
Issue number	6
DOIs	https://doi.org/10.1109/JPHOT.2020.3037220
State	Published - Dec 2020

Keywords

Arrhenius plot
GaN
leakage current
low temperature current-voltage characterization
micro LEDs
Ultra-violet emission

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10.1109/JPHOT.2020.3037220

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Tsai, Y. L., Huang, S. K., Huang, H. H., Yang, S. M., Liang, K. L., Kuo, W. H., Fang, Y. H., Wu, C. I., Wang, S. W., Shih, H. Y., Xu, Z., Cho, M., Shen, S. C., & Lin, C. C. (2020). Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer. IEEE Photonics Journal, 12(6), [9256288]. https://doi.org/10.1109/JPHOT.2020.3037220

Tsai, Yi Lin ; Huang, Sheng Kai ; Huang, Huang Hsiung ; Yang, Shu Mei ; Liang, Kai Ling ; Kuo, Wei Hung ; Fang, Yen Hsiang ; Wu, Chih I. ; Wang, Shou Wei ; Shih, Hsiang Yun ; Xu, Zhiyu ; Cho, Minkyu ; Shen, Shyh Chiang ; Lin, Chien Chung. / Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer. In: IEEE Photonics Journal. 2020 ; Vol. 12, No. 6.

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title = "Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer",

abstract = "We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices. ",

keywords = "Arrhenius plot, GaN, leakage current, low temperature current-voltage characterization, micro LEDs, Ultra-violet emission",

author = "Tsai, {Yi Lin} and Huang, {Sheng Kai} and Huang, {Huang Hsiung} and Yang, {Shu Mei} and Liang, {Kai Ling} and Kuo, {Wei Hung} and Fang, {Yen Hsiang} and Wu, {Chih I.} and Wang, {Shou Wei} and Shih, {Hsiang Yun} and Zhiyu Xu and Minkyu Cho and Shen, {Shyh Chiang} and Lin, {Chien Chung}",

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doi = "10.1109/JPHOT.2020.3037220",

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Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs with an ITO Emission Window Layer. / Tsai, Yi Lin; Huang, Sheng Kai; Huang, Huang Hsiung; Yang, Shu Mei; Liang, Kai Ling; Kuo, Wei Hung; Fang, Yen Hsiang; Wu, Chih I.; Wang, Shou Wei; Shih, Hsiang Yun; Xu, Zhiyu; Cho, Minkyu; Shen, Shyh Chiang; Lin, Chien Chung.

In: IEEE Photonics Journal, Vol. 12, No. 6, 9256288, 12.2020.

Research output: Contribution to journal › Article › peer-review

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AU - Tsai, Yi Lin

AU - Huang, Sheng Kai

AU - Huang, Huang Hsiung

AU - Yang, Shu Mei

AU - Liang, Kai Ling

AU - Kuo, Wei Hung

AU - Fang, Yen Hsiang

AU - Wu, Chih I.

AU - Wang, Shou Wei

AU - Shih, Hsiang Yun

AU - Xu, Zhiyu

AU - Cho, Minkyu

AU - Shen, Shyh Chiang

AU - Lin, Chien Chung

PY - 2020/12

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N2 - We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.

AB - We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted <0.15 nm during the current injection. The 50 μm device had a 3.8 times greater relative illumination intensity than did the 5 μm device, suggesting a degradation in quantum efficiency in small devices. Measurements of temperature-dependent reverse leakage current indicated (1) thermal activation from deep centers and (2) a high percentage of components with surface recombination current in the small devices.

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KW - GaN

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KW - low temperature current-voltage characterization

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