Extended data retention characteristics after more than 104 write and erase cycles in EEPROMs

S. Aritome*, R. Kirisawa, T. Endoh, R. Nakayama, Shirota Riichiro, K. Sakui, K. Ohuchi, F. Masuoka

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

17 Scopus citations


Improvements in data retention characteristics of a FETMOS cell which has a self-aligned double poly-Si stacked structure are discussed. The improvement results from the use of a uniform write and erase technology. Experiments show that gradual detrapping of electrons from the gate oxide to the substrate effectively suppresses data loss of the erased cell which stores positive charges in the floating gate. It is shown that a uniform write and uniform erase technology using Fowler-Nordheim tunneling current guarantees a wide cell threshold voltage window even after 106 write and erase cycles. This technology realizes a highly reliable EEPROM with extended data retention characteristics.

Original languageEnglish
Pages (from-to)259-264
Number of pages6
JournalAnnual Proceedings - Reliability Physics (Symposium)
StatePublished - 1 Dec 1990
EventTwenty Eight International Reliability Physics Symposium 1990 - New Orleans, LA, USA
Duration: 27 Mar 199029 Mar 1990

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