This paper introduces new technology features to support ultra high-speed and MS/RF applications incorporated into a leading-edge fully manufacturable 0.13 μm CMOS foundry technology. New core devices with 15.5 Å and nominal 75 nm physical gate lengths support at least 10% performance improvement with respect to prior release. These devices offer the best Ioff-Idsat performance reported so far for 1.2 V applications. To support high-speed I/O standards, additional 1.8 V-32 Å I/O devices are integrated with the 15.5 Å transistors. Leading-edge passive elements for MS/RF applications are reported in this work. Advanced Cu/low-k back end process integration that can support up to nine layers of metal is also demonstrated.
|Number of pages||2|
|State||Published - 2002|
|Event||2002 Symposium on VLSI Technology Digest of Technical Papers - Honolulu, HI, United States|
Duration: 11 Jun 2002 → 13 Jun 2002
|Conference||2002 Symposium on VLSI Technology Digest of Technical Papers|
|Period||11/06/02 → 13/06/02|