Exploration and evaluation of TCAM with hybrid tunneling FET and FinFET devices for ultra-low-voltage applications

Meng Hsuan Tu, Yin Nien Chen, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper, we investigate the hybrid TFET-FinFET implementation of ternary content addressable memory (TCAM) and compare the search time, power and energy with all FinFET and all TFET implementations in near-threshold region using atomistic 3D TCAD mixed-mode simulations for transistor characteristics and HSPICE circuit simulations with look-up table based Verilog-A models calibrated with TCAD simulation results. The TCAM utilizes a don't-care-based ripple search line (SL) to improve the search performance and power. In the hybrid design, TFETs are used for comparison circuit to improve the performance and energy of serially connected match line (ML) at low voltage, while FinFETs are used for the rest of the circuit for better cell stability, switching power and leakage power.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
StatePublished - 7 Jun 2017
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 24 Apr 201727 Apr 2017

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Conference

Conference2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
CountryTaiwan
CityHsinchu
Period24/04/1727/04/17

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