Exploiting analogue OxRAM conductance modulation for contrast enhancement application

A. Kumar; S. S. Bezugam; B. Hudec; T. H. Hou; M. Suri

doi:10.1049/el.2020.0106

Exploiting analogue OxRAM conductance modulation for contrast enhancement application

A. Kumar^*, S. S. Bezugam, B. Hudec, T. H. Hou, M. Suri

^*Corresponding author for this work

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

Abstract

The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.

Original language	English
Pages (from-to)	594-597
Number of pages	4
Journal	Electronics Letters
Volume	56
Issue number	12
DOIs	https://doi.org/10.1049/el.2020.0106
State	Published - 11 Jun 2020

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@article{01441798a4954fbd9d21bbe5854ad0ac,

title = "Exploiting analogue OxRAM conductance modulation for contrast enhancement application",

abstract = "The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.",

author = "A. Kumar and Bezugam, {S. S.} and B. Hudec and Hou, {T. H.} and M. Suri",

year = "2020",

month = jun,

day = "11",

doi = "10.1049/el.2020.0106",

language = "English",

volume = "56",

pages = "594--597",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "12",

}

TY - JOUR

T1 - Exploiting analogue OxRAM conductance modulation for contrast enhancement application

AU - Kumar, A.

AU - Bezugam, S. S.

AU - Hudec, B.

AU - Hou, T. H.

AU - Suri, M.

PY - 2020/6/11

Y1 - 2020/6/11

N2 - The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.

AB - The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.

UR - http://www.scopus.com/inward/record.url?scp=85087097004&partnerID=8YFLogxK

U2 - 10.1049/el.2020.0106

DO - 10.1049/el.2020.0106

M3 - Article

AN - SCOPUS:85087097004

VL - 56

SP - 594

EP - 597

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 12

ER -