Exploiting analogue OxRAM conductance modulation for contrast enhancement application

A. Kumar*, S. S. Bezugam, B. Hudec, T. H. Hou, M. Suri

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.

Original languageEnglish
Pages (from-to)594-597
Number of pages4
JournalElectronics Letters
Volume56
Issue number12
DOIs
StatePublished - 11 Jun 2020

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