Abstract
The authors present a unique application of analogue oxide-based resistive memory (OxRAM) device for sensor-level information storage and computation. They show that quality of low-contrast images in low-light can be improved by carefully exploiting OxRAM conductance modulation from specific bi-layer OxRAM material stacks. The proposed methodology involves conversion of light intensity to pulse frequency followed by resistance encoding as different non-volatile OxRAM resistance states.
Original language | English |
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Pages (from-to) | 594-597 |
Number of pages | 4 |
Journal | Electronics Letters |
Volume | 56 |
Issue number | 12 |
DOIs | |
State | Published - 11 Jun 2020 |