TY - GEN
T1 - Experiments and modelings of various recombination junction combinations in thin film tandem solar cells
AU - Chiang, C. L.
AU - Yu, Peichen
AU - Shieh, J. M.
PY - 2011/12/1
Y1 - 2011/12/1
N2 -
a-Si/a-Si tandem cells have a higher fill factor (FF), and lower light degradation than the single junction due to an intrinsic high electric field. Also, they are thinner and cheaper than a-Si single junction solar cells.[1] This paper presents experiment results of a-Si/a-Si tandem solar cells deposited by a High-Density Plasma Chemical Vapor Deposition (HDPCVD) and uses AMPS-1D to simulate the performance of different material compositions at the recombination junction (RJ), including n-a-Si/p-a-Si, n-a-Si/p-mc-Si, n-mc-Si/p-mc-Si, and n-mc-Si/p-a-SiC.[2,4] In the experiment, although we found that as the thickness of the n-a-Si and p-a-Si layers of the RJ decreased, and the flow rate of PH
3
for the n-a-Si layer of the top cell lowered, the photocurrent (Jsc) and FF increased due to a reduced barrier height at the n-layer that facilitates the recombination and tunneling. The simulation results showed that the n-mc-Si/p-mc-Si composition had the best performance at the tunneling junction, and its highest efficiency could reach 10.4%.
AB -
a-Si/a-Si tandem cells have a higher fill factor (FF), and lower light degradation than the single junction due to an intrinsic high electric field. Also, they are thinner and cheaper than a-Si single junction solar cells.[1] This paper presents experiment results of a-Si/a-Si tandem solar cells deposited by a High-Density Plasma Chemical Vapor Deposition (HDPCVD) and uses AMPS-1D to simulate the performance of different material compositions at the recombination junction (RJ), including n-a-Si/p-a-Si, n-a-Si/p-mc-Si, n-mc-Si/p-mc-Si, and n-mc-Si/p-a-SiC.[2,4] In the experiment, although we found that as the thickness of the n-a-Si and p-a-Si layers of the RJ decreased, and the flow rate of PH
3
for the n-a-Si layer of the top cell lowered, the photocurrent (Jsc) and FF increased due to a reduced barrier height at the n-layer that facilitates the recombination and tunneling. The simulation results showed that the n-mc-Si/p-mc-Si composition had the best performance at the tunneling junction, and its highest efficiency could reach 10.4%.
UR - http://www.scopus.com/inward/record.url?scp=84861031883&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2011.6186023
DO - 10.1109/PVSC.2011.6186023
M3 - Conference contribution
AN - SCOPUS:84861031883
SN - 9781424499656
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 590
EP - 593
BT - Program - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Y2 - 19 June 2011 through 24 June 2011
ER -