Experiments and modelings of various recombination junction combinations in thin film tandem solar cells

C. L. Chiang*, Peichen Yu, J. M. Shieh

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

a-Si/a-Si tandem cells have a higher fill factor (FF), and lower light degradation than the single junction due to an intrinsic high electric field. Also, they are thinner and cheaper than a-Si single junction solar cells.[1] This paper presents experiment results of a-Si/a-Si tandem solar cells deposited by a High-Density Plasma Chemical Vapor Deposition (HDPCVD) and uses AMPS-1D to simulate the performance of different material compositions at the recombination junction (RJ), including n-a-Si/p-a-Si, n-a-Si/p-mc-Si, n-mc-Si/p-mc-Si, and n-mc-Si/p-a-SiC.[2,4] In the experiment, although we found that as the thickness of the n-a-Si and p-a-Si layers of the RJ decreased, and the flow rate of PH 3 for the n-a-Si layer of the top cell lowered, the photocurrent (Jsc) and FF increased due to a reduced barrier height at the n-layer that facilitates the recombination and tunneling. The simulation results showed that the n-mc-Si/p-mc-Si composition had the best performance at the tunneling junction, and its highest efficiency could reach 10.4%.

Original languageEnglish
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Pages590-593
Number of pages4
DOIs
StatePublished - 1 Dec 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: 19 Jun 201124 Jun 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference37th IEEE Photovoltaic Specialists Conference, PVSC 2011
CountryUnited States
CitySeattle, WA
Period19/06/1124/06/11

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