Experimentally Determining the Top and Edge Contact Resistivities of Two-step Sulfurization Nb-Doped MoS2 Films Using the Transmission Line Measurement

Yun Yan Chung, Chi Feng Li, Chao Ting Lin, Yen Teng Ho, Chao Hsin Chien

Research output: Contribution to journalArticle

Abstract

This study determined the top (vertical) and edge (horizontal) resistivities of metal–MoS2 contact based on the experimental results obtained using the transmission line measurement structure. A novel two-step sulfurization scheme was conducted for forming Nb-doped MoS2 films on a sapphire substrate. The edge contact resistivity, ρC_edge, was almost two orders of magnitude lower than the top contact resistivity, ρC_top. Our findings highlight a simple and effective method to accurately determine the edge and top contact resistances of a metal–two-dimensional material contact.

Original languageEnglish
JournalIEEE Electron Device Letters
DOIs
StateAccepted/In press - 1 Jan 2019

Keywords

  • edge contact resistivity
  • metal–2D material contact
  • MoS2
  • Nb-doped
  • TLM
  • TMD
  • two-step sulfurization

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