Experimental verification of a 3D scaling principle for low Vce(sat) IGBT

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. OmuraH. Ohashi, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations

Abstract

Three dimensionally (3D) scaled IGBTs that have a scaling factor of 3 (k=3) with respect to current commercial products (k=1) were fabricated for the first time. The scaling was applied to the lateral and vertical dimensions as well as the gate voltage. A significant decrease in ON resistance, - Vce(sat) reduction from 1.70 to 1.26 V - was experimentally confirmed for the 3D scaled IGBTs.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages10.6.1-10.6.4
ISBN (Electronic)9781509039012
DOIs
StatePublished - 31 Jan 2017
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 3 Dec 20167 Dec 2016

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference62nd IEEE International Electron Devices Meeting, IEDM 2016
CountryUnited States
CitySan Francisco
Period3/12/167/12/16

Fingerprint Dive into the research topics of 'Experimental verification of a 3D scaling principle for low V<sub>ce(sat)</sub> IGBT'. Together they form a unique fingerprint.

  • Cite this

    Kakushima, K., Hoshii, T., Tsutsui, K., Nakajima, A., Nishizawa, S., Wakabayashi, H., Muneta, I., Sato, K., Matsudai, T., Saito, W., Saraya, T., Itou, K., Fukui, M., Suzuki, S., Kobayashi, M., Takakura, T., Hiramoto, T., Ogura, A., Numasawa, Y., ... Iwai, H. (2017). Experimental verification of a 3D scaling principle for low Vce(sat) IGBT. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 10.6.1-10.6.4). [7838390] (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838390