The electrical characteristics of ultrathin-body SOI CMOSFETs with SOI thickness ranging from 2.3 nm to 8 nm are intensively investigated. As a result, it is demonstrated, for the first time, that electron mobility increases as SOI thickness decreases, when SOI thickness is in the range from 3.5 nm to 4.5 nm. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 1 Dec 2002|
|Event||2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States|
Duration: 8 Dec 2002 → 11 Dec 2002