Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs

K. Uchida, Watanabe Hiroshi, J. Koga, A. Kinoshita, S. Takagi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

15 Scopus citations

Abstract

The electrical characteristics of ultrathin-body SOI CMOSFETs are intensively investigated. It is demonstrated that electron mobility increases as SOI thickness decreases, when SOI thickness, TSOI, is in the range from 3.5 nm to 4.5 nm. On the other hand, hole mobility decreases monotonically as TSOI decreases. In addition, it is demonstrated that, when SOI thickness is thinner than 4 nm, slight (even atomic-level) SOI thickness fluctuations have a significant impact on threshold voltage, gate-channel capacitance, and carrier mobility of ultrathin-body CMOSFETs.

Original languageEnglish
Title of host publicationSISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages8-13
Number of pages6
ISBN (Electronic)0780378261
DOIs
StatePublished - 1 Jan 2003
Event2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003 - Boston, United States
Duration: 3 Sep 20035 Sep 2003

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2003-January

Conference

Conference2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2003
CountryUnited States
CityBoston
Period3/09/035/09/03

Keywords

  • CMOSFETs
  • Electric variables
  • Electron mobility
  • Fluctuations
  • MOSFET circuits
  • Particle scattering
  • Raman scattering
  • Residual stresses
  • Semiconductor films
  • Threshold voltage

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  • Cite this

    Uchida, K., Hiroshi, W., Koga, J., Kinoshita, A., & Takagi, S. (2003). Experimental study on carrier transport mechanism in ultrathin-body SOI MOSFETs. In SISPAD 2003 - 2003 IEEE International Conference on Simulation of Semiconductor Processes and Devices (pp. 8-13). [1233625] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2003-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SISPAD.2003.1233625