Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

T. Kawanago*, J. Song, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We experimentally examine the effective mobility in nMOSFETs with La2O3 gate dielectrics without SiOx-based interfacial layer. The reduced mobility is mainly caused by fixed charges in High-k gate dielectrics and the contribution of the interface state density is approximately 30% at Ns = 5 × 1011 cm-2 in the low 1011 cm-2 eV-1 order. It is considered that one of the effective methods for improving mobility is to utilize La-silicate layer formed by high temperature annealing. However, there essentially exists trade-off relationship between high temperature annealing and small EOT.

Original languageEnglish
Pages (from-to)1629-1631
Number of pages3
JournalMicroelectronic Engineering
Volume86
Issue number7-9
DOIs
StatePublished - Jul 2009

Keywords

  • Direct contact
  • Effective mobility
  • High-k

Fingerprint Dive into the research topics of 'Experimental study for high effective mobility with directly deposited HfO<sub>2</sub>/La<sub>2</sub>O<sub>3</sub> MOSFET'. Together they form a unique fingerprint.

Cite this