Experimental observation on the random dopant fluctuation of small scale trigate CMOS devices

Steve S. Chung*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The random dopant fluctuation is one of the most important issues for sub-50nm CMOS technologies in terms of the device architecture and manufacturing. This paper will demonstrate the methodology to understand the dopant fluctuation via a purely experimental approach. It will be demonstrated in advanced bulk-trigate devices. The discrete dopant distribution along the channel direction can be determined. Boron clustering effect in nMOSFETs can be reasonably explained which results in a larger Vth variation, in comparison to that of pMOSFETs. Moreover, experiments have been extended to the advanced bulk-trigate CMOS devices. The sidewall roughness effect in trigate has also been studied. This approach provides a direct-observation of the random dopant fluctuation (RDF) and is useful for the gate oxide quality monitoring of future generation trigate devices.

Original languageEnglish
Title of host publicationICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
DOIs
StatePublished - 1 Dec 2012
Event2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012 - Xi'an, China
Duration: 29 Oct 20121 Nov 2012

Publication series

NameICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2012
CountryChina
CityXi'an
Period29/10/121/11/12

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    Chung, S. S. (2012). Experimental observation on the random dopant fluctuation of small scale trigate CMOS devices. In ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings [6466741] (ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2012.6466741