Experimental investigation of surface-roughness-limited mobility in uniaxial strained pMOSFETs

William P N Chen, Jack J Y Kuo, Pin Su

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

This letter provides an experimental assessment of surface-roughness- scattering-limited mobility (μSR) under process-induced uniaxial strain and compares the strain sensitivity between mS Rand phonon-scattering-limited mobility (μPH). By an accurate split &C-V mobility extraction method, the &mSR of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that μSR has stronger stress sensitivity than μPH. Furthermore, the surface roughness mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations.

Original languageEnglish
Article number5665748
Pages (from-to)113-115
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number2
DOIs
StatePublished - 1 Feb 2011

Keywords

  • MOSFET
  • strain silicon
  • surface-roughness-limited mobility
  • uniaxial

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