This letter provides an experimental assessment of surface-roughness- scattering-limited mobility (μSR) under process-induced uniaxial strain and compares the strain sensitivity between mS Rand phonon-scattering-limited mobility (μPH). By an accurate split &C-V mobility extraction method, the &mSR of short-channel pMOSFETs was extracted at an ultralow temperature to suppress the phonon scattering mechanism. Our result indicates that μSR has stronger stress sensitivity than μPH. Furthermore, the surface roughness mobility enhancement tends to increase as the vertical electric field increases. Our experimental findings confirm the previously reported results based on simulations.
- strain silicon
- surface-roughness-limited mobility