Experimental Demonstration of p-Channel Germanium Epitaxial Tunnel Layer (ETL) Tunnel FET with High Tunneling Current and High ON/OFF Ratio

Pei Yu Wang, Bing-Yue Tsui

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

A CMOS process compatible p-channel tunnel field-effect transistor (TFET) with an epitaxial tunnel layer (ETL) structure is demonstrated experimentally. The fabricated ETL p-TFET exhibits high tunneling current (ION ∼ 0.17 μA/μm at /VG/ = 0.5 V after VTH adjustment), ultra-low OFF-state current, and good average subthreshold swing (S.S. ∼100 mV/ decade up to 10 nA/μm). Overall performance exceeds that of the current state-of-the-art Ge-based planar p-TFETs.

Original languageEnglish
Article number7293092
Pages (from-to)1264-1266
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number12
DOIs
StatePublished - 1 Dec 2015

Keywords

  • Tunnel field-effect transistor
  • band to band tunneling
  • subthreshold swing (S.S.)

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