Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell

Ava J. Tan*, Korok Chatterjee, Jiuren Zhou, Daewoong Kwon, Yu Hung Liao, Suraj Cheema, Chenming Hu, Sayeef Salahuddin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


In this work, we present an experimental demonstration of a content addressable memory (CAM) cell based on ferroelectric HfO2 field effect transistors (FeFETs). Our proposed ferroelectric CAM (FeCAM) utilizes a CMOS-compatible ferroelectric material, hafnium zirconium oxide (HZO), as the gate dielectric. We discuss operation of the FeCAM cell and propose a suitable architecture to realize in-memory computation as well as single clock cycle content-driven search. In addition, the HZO FeFET is analyzed for its intrinsic memory characteristic, and design considerations are identified for improving device and therefore projected system-level performance. Our results indicate that FeCAM is well-suited to accommodate demanding modern computational needs by sealing the gaps between conventional memory, logic, and continued device scaling.

Original languageEnglish
Article number8946709
Pages (from-to)240-243
Number of pages4
JournalIEEE Electron Device Letters
Issue number2
StatePublished - Feb 2020


  • content addressable memory
  • FeFET
  • ferroelectric memory
  • Ferroelectrics
  • hafnium zirconium oxide
  • logic-in-memory

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