Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes

Yi An Chang*, Sheng Horng Yen, Tsung Hsine Ko, Te Chung Wang, Chun Yi Lu, Hao-Chung Kuo, Yen Kuang Kuo, Tien-chang Lu, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
DOIs
StatePublished - 1 Jan 2006
EventQuantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
Duration: 21 May 200621 May 2006

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceQuantum Electronics and Laser Science Conference, QELS 2006
CountryUnited States
CityLong Beach, CA
Period21/05/0621/05/06

Fingerprint Dive into the research topics of 'Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes'. Together they form a unique fingerprint.

Cite this