Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes

Yi An Chang; Sheng Horng Yen; Te Chung Wang; Hao-Chung Kuo; Yen Kuang Kuo; Tien-Chang Lu; Shing Chung Wang

doi:10.1088/0268-1242/21/5/005

Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes

Yi An Chang^*, Sheng Horng Yen, Te Chung Wang, Hao-Chung Kuo, Yen Kuang Kuo, Tien-Chang Lu, Shing Chung Wang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

An ultraviolet (UV) AlGaInN light-emitting diode (LED) with 370 nm emission is demonstrated. At room temperature (RT) UV power of 0.8 mW at 20 mA with 3.6 V operation voltage is achieved. It provides 4 mW output when driven at 125 mA under continuous-wave (CW) operation. Qualitative optimization of the Al composition in the AlGaN electron-block layer and the quaternary AlGaInN quantum well (QW) number of the UV LED is also investigated in this study. The numerical results fit with the experimentally demonstrated output performance of our AlGaInN UV LED. We find that the UV AlGaInN LED can provide better output characteristics when the Al composition in the AlGaN electron-block layer is in the range 19-21% and the AlGaInN QW number is in the range 5-7 by reducing the electron leakage current.

Original language	English
Pages (from-to)	598-603
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	21
Issue number	5
DOIs	https://doi.org/10.1088/0268-1242/21/5/005
State	Published - 1 May 2006

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title = "Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes",

abstract = "An ultraviolet (UV) AlGaInN light-emitting diode (LED) with 370 nm emission is demonstrated. At room temperature (RT) UV power of 0.8 mW at 20 mA with 3.6 V operation voltage is achieved. It provides 4 mW output when driven at 125 mA under continuous-wave (CW) operation. Qualitative optimization of the Al composition in the AlGaN electron-block layer and the quaternary AlGaInN quantum well (QW) number of the UV LED is also investigated in this study. The numerical results fit with the experimentally demonstrated output performance of our AlGaInN UV LED. We find that the UV AlGaInN LED can provide better output characteristics when the Al composition in the AlGaN electron-block layer is in the range 19-21% and the AlGaInN QW number is in the range 5-7 by reducing the electron leakage current.",

author = "Chang, {Yi An} and Yen, {Sheng Horng} and Wang, {Te Chung} and Hao-Chung Kuo and Kuo, {Yen Kuang} and Tien-Chang Lu and Wang, {Shing Chung}",

year = "2006",

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doi = "10.1088/0268-1242/21/5/005",

language = "English",

volume = "21",

pages = "598--603",

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T1 - Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes

AU - Chang, Yi An

AU - Yen, Sheng Horng

AU - Wang, Te Chung

AU - Kuo, Hao-Chung

AU - Kuo, Yen Kuang

AU - Lu, Tien-Chang

AU - Wang, Shing Chung

PY - 2006/5/1

Y1 - 2006/5/1

N2 - An ultraviolet (UV) AlGaInN light-emitting diode (LED) with 370 nm emission is demonstrated. At room temperature (RT) UV power of 0.8 mW at 20 mA with 3.6 V operation voltage is achieved. It provides 4 mW output when driven at 125 mA under continuous-wave (CW) operation. Qualitative optimization of the Al composition in the AlGaN electron-block layer and the quaternary AlGaInN quantum well (QW) number of the UV LED is also investigated in this study. The numerical results fit with the experimentally demonstrated output performance of our AlGaInN UV LED. We find that the UV AlGaInN LED can provide better output characteristics when the Al composition in the AlGaN electron-block layer is in the range 19-21% and the AlGaInN QW number is in the range 5-7 by reducing the electron leakage current.

AB - An ultraviolet (UV) AlGaInN light-emitting diode (LED) with 370 nm emission is demonstrated. At room temperature (RT) UV power of 0.8 mW at 20 mA with 3.6 V operation voltage is achieved. It provides 4 mW output when driven at 125 mA under continuous-wave (CW) operation. Qualitative optimization of the Al composition in the AlGaN electron-block layer and the quaternary AlGaInN quantum well (QW) number of the UV LED is also investigated in this study. The numerical results fit with the experimentally demonstrated output performance of our AlGaInN UV LED. We find that the UV AlGaInN LED can provide better output characteristics when the Al composition in the AlGaN electron-block layer is in the range 19-21% and the AlGaInN QW number is in the range 5-7 by reducing the electron leakage current.

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U2 - 10.1088/0268-1242/21/5/005

DO - 10.1088/0268-1242/21/5/005

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VL - 21

SP - 598

EP - 603

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

ER -

Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes

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