Experimental and analytical studies on CMOS scaling in deep submicron regime including quantum and polysilicon gate depletion effects

Kai Chen*, Chen-Ming Hu, Peng Fang, Ashawant Gupta, Ming Ren Lim, Don Wollesen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

MOSFETs and CMOS ring oscillators with gate oxide down to 2.5 nm and channel length down to 0.2 μm were investigated at voltages from 1.5 V to 3.3 V to confirm predictions made using analytical models as well as to study the scaling effects. Investigations made on the fabricated MOSFETs and ring oscillators confirms that CMOS in deep submicron regimes can be accurately modeled and predicted based from the electrical oxide thickness and universal mobility models.

Original languageEnglish
Pages20-21
Number of pages2
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: 23 Jun 199725 Jun 1997

Conference

ConferenceProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period23/06/9725/06/97

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