MOSFETs and CMOS ring oscillators with gate oxide down to 2.5 nm and channel length down to 0.2 μm were investigated at voltages from 1.5 V to 3.3 V to confirm predictions made using analytical models as well as to study the scaling effects. Investigations made on the fabricated MOSFETs and ring oscillators confirms that CMOS in deep submicron regimes can be accurately modeled and predicted based from the electrical oxide thickness and universal mobility models.
|Number of pages||2|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA|
Duration: 23 Jun 1997 → 25 Jun 1997
|Conference||Proceedings of the 1997 55th Annual Device Research Conference|
|City||Fort Collins, CO, USA|
|Period||23/06/97 → 25/06/97|