Experimental Analysis of Quasi-Ballistic Transport in Advanced Si n FinFETs Using New Extraction Method

Ming Huei Lin*, Pin Su, Hou Yu Chen, Jen Hsiang Lu, Vincent S. Chang, Shyh Horng Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

For the first time, the drain-bias dependence of mean free path, predicted by previous Monte Carlo simulations, is experimentally confirmed in Si n FinFETs by using an improved formulation, considering the additional scatterings attributed to source/drain as well as the carrier degeneracy. This letter indicates that, for optimized Si n FinFETs, the carrier velocity and drive current still increase monotonically with decreasing channel length. However, the degradation in mean free path leads to the saturation in ballistic ratio (60%), resulting in quasi-ballistic transport for devices even with sub-20-nm channel length.

Original languageEnglish
Article number8423118
Pages (from-to)1397-1400
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number9
DOIs
StatePublished - 1 Sep 2018

Keywords

  • Mean free path
  • drain scattering
  • long-range Coulomb interaction
  • neutral defects
  • quasi-ballistic transport

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