Exciton localization behaviors of basal stacking faults in a-plane AlGaN alloys

Huei Min Huang*, Yung Chi Wu, Tien-chang Lu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

We study the basal plane stacking faults (BSFs) related optical properties in a-plane AlGaN alloys with different Al composition ranging from 0 to 0.28. The low-temperature photoluminescence (PL) spectra for AlGaN show two dominant peaks attributed to the emission of near band edge and BSFs-bound excitons, respectively. The PL integrated intensity ratio of the BSFs to NBE is found to correlate to the density of BSFs observed by the transmission electron microscopy. Finally, the exciton localization behaviors of BSFs in a-plane AlGaN alloys is observed and discussed in this study.

Original languageEnglish
Pages (from-to)H491-H495
Number of pages5
JournalJournal of the Electrochemical Society
Volume158
Issue number5
DOIs
StatePublished - Jan 2011

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