Excitation Density and Temperature Dependent Photoluminescence of InGaAs Self-Assembled Quantum Dots

Wen-Hao Chang*, Tzu Min Hsu, Kuei Fen Tsai, Tzer En Nee, Jen Inn Chyi, Nien Tze Yeh

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

In this paper, we shall report on the excitation density and temperature dependent photoluminescence produced by discrete energy levels from InGaAs self-assembled quantum dots. While increasing the photoexcitation density, five peaks originating from discrete energy levels of quantum dot and welting layer are observed. By deconvoluting these spectra using multiple Gaussian fit, the intensity of each state is saturated following its degeneracy. We describe the lateral confinement of quantum dots using a parabolic potential model. The saturated values are in good agreement with the degeneracy of this potential type. From the temperature dependent photoluminescence, we observed the thermally activated quenching of each state. Our results suggest that the wetting layer acts as a barrier to the carrier thermallization processes offering a two dimensional path for inter-dot coupling.

Original languageEnglish
Pages (from-to)554-557
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
DOIs
StatePublished - 1 Jan 1999
EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
Duration: 31 May 19984 Jun 1998

Keywords

  • Gaas
  • Ingaas
  • PL
  • QD
  • Quantum-dots

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