Exchange disorder band bending of the Cd1-xFexS diluted magnetic semiconductor

Wu-Ching Chou*, S. S. Kuo, F. R. Chen, A. Twardowski, J. Tworzydło, Y. F. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The energy of excitons A, B, and C of Cd1-x,FexS (x < 0.02) is studied as a function of Fe concentration at T = 10 K in the absence of a magnetic field. The observed band bending effect (largest for exciton A) is attributed to the s, p-d exchange interaction correction resulting from the exchange disorder.

Original languageEnglish
Pages (from-to)125-133
Number of pages9
JournalPhysica Status Solidi (B) Basic Research
Volume193
Issue number1
DOIs
StatePublished - 1 Jan 1996

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