Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling

Jun Wei Wu*, Jian Wen You, Huan Chi Ma, Chih Chang Cheng, Chang Feng Hsu, Chih Sheng Chang, Gou Wei Huang, Ta-Hui Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Low-frequency flicker noise in analog n-MOSFETs with 15-Å gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.

Original languageEnglish
Pages (from-to)2061-2066
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume52
Issue number9
DOIs
StatePublished - 1 Sep 2005

Keywords

  • Low-frequency noise
  • Random telegraph signal
  • Ultrathin oxide MOSFET
  • Valence-band tunneling

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