Excess hot-carrier currents in SOI MOSFETs and its implications

Pin Su, Ken Ichi Goto, T. Sugii, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

This work demonstrates that excess hot-carrier currents in SOI MOSFETs are caused by self-heating. Self-heating-free ISUB data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that the driving force of impact ionization transitions from the electric field to the lattice temperature with power-supply scaling below 1.2 V.

Original languageEnglish
Title of host publication2002 IEEE International Reliability Physics Symposium Proceedings, IRPS 2002 - 40th Annual
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages93-97
Number of pages5
ISBN (Electronic)0780373529
DOIs
StatePublished - 1 Jan 2002
Event40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States
Duration: 7 Apr 200211 Apr 2002

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2002-January
ISSN (Print)1541-7026

Conference

Conference40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
CountryUnited States
CityDallas
Period7/04/0211/04/02

Keywords

  • CMOS technology
  • Hot carriers
  • Impact ionization
  • Laboratories
  • MOSFETs
  • Silicon
  • Substrates
  • Temperature dependence
  • Thermal conductivity
  • Thermal resistance

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