Excellent low-pressure-oxidized S13N4 films on roughened poly-Si for high-density DRAM's

Han Wen Liu*, Huang-Chung Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

High-reliability and good-performance stacked storage capacitors with high capacitance value of 17.8 fF/μm2 has been realized using low-pressure-oxidized thin nitride films deposited on roughened poly-Si electrodes. This novel electrodes are fabricated by H3PO4-etched and RCA-cleaned. The leakage current density at +2.5 and -2.5 V are 9.07 × 10-9 and -2.4 × 10-8 A/cm2, respectively, fulfilling the requirements of 256 Mb DRAM's. Weibull plots of time-dependent-dielectric-breakdown (TDDB) characteristics under constant current stress and constant voltage stress also show tight distribution and good electrical properties. Hence, this easy and simple technique is promising for future high-density DRAM's applications.

Original languageEnglish
Pages (from-to)320-322
Number of pages3
JournalIEEE Electron Device Letters
Volume19
Issue number9
DOIs
StatePublished - 1 Sep 1998

Fingerprint Dive into the research topics of 'Excellent low-pressure-oxidized S1<sub>3</sub>N<sub>4</sub> films on roughened poly-Si for high-density DRAM's'. Together they form a unique fingerprint.

Cite this