Evolution of RESET current and filament morphology in low-power HfO2 unipolar resistive switching memory

Tuo-Hung Hou*, Kuan Liang Lin, Jiann Shieh, Jun Hung Lin, Cheng Tung Chou, Yao Jen Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

42 Scopus citations

Abstract

Reduction in RESET current is crucial for future high-density resistive-switching memory. We have reported a unipolar-switching Ni/HfO 2/Si structure with low RESET current of 50 μA and RESET power of 30 μW. In addition, a unique cycling evolution of RESET current across more than two orders of magnitude allows us to probe into the evolvement of filament morphology at nanoscale, using a simple yet quantitative model. Filament morphology was found to depend strongly on the charge-dissipation current proportional to the powers of SET voltage. Moreover, the formation of inactive semiconductive filaments plays an important role in the reduction in RESET current.

Original languageEnglish
Article number103511
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume98
Issue number10
DOIs
StatePublished - 7 Mar 2011

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