Evidence for the coupling between γ-band carriers and the incommensurate spin fluctuations in Sr2RuO4

Ping Lou; Ming-Che Chan; Wen Chin Wu

doi:10.1103/PhysRevB.68.012506

Evidence for the coupling between γ-band carriers and the incommensurate spin fluctuations in Sr₂RuO₄

Ping Lou^*, Ming-Che Chan, Wen Chin Wu

^*Corresponding author for this work

Institute of Photonic System

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The normal-state transport properties are investigated for Sr₂RuO₄ both in and out of the RuO₂ plane. It is shown that a quantitatively consistent explanation of ρ_ab and ρ_c can be obtained by assuming that, in addition to the normal scattering of electrons by impurities and the electron-electron scattering, there is a strong coupling between the carriers of γ band and the incommensurate spin fluctuations peaked at Q_i=(±0.6,±0.6)π/a. In order to test this model, we suggest a pressure-dependent resistivity measurement to be performed.

Original language	English
Article number	012506
Pages (from-to)	1-4
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	68
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevB.68.012506
State	Published - 1 Jul 2003

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@article{9a81bd82fa254179b895a67590bd5b63,

title = "Evidence for the coupling between γ-band carriers and the incommensurate spin fluctuations in Sr2RuO4",

abstract = "The normal-state transport properties are investigated for Sr2RuO4 both in and out of the RuO2 plane. It is shown that a quantitatively consistent explanation of ρab and ρc can be obtained by assuming that, in addition to the normal scattering of electrons by impurities and the electron-electron scattering, there is a strong coupling between the carriers of γ band and the incommensurate spin fluctuations peaked at Qi=(±0.6,±0.6)π/a. In order to test this model, we suggest a pressure-dependent resistivity measurement to be performed.",

author = "Ping Lou and Ming-Che Chan and Wu, {Wen Chin}",

year = "2003",

month = jul,

day = "1",

doi = "10.1103/PhysRevB.68.012506",

language = "English",

volume = "68",

pages = "1--4",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

number = "1",

}

TY - JOUR

T1 - Evidence for the coupling between γ-band carriers and the incommensurate spin fluctuations in Sr2RuO4

AU - Lou, Ping

AU - Chan, Ming-Che

AU - Wu, Wen Chin

PY - 2003/7/1

Y1 - 2003/7/1

N2 - The normal-state transport properties are investigated for Sr2RuO4 both in and out of the RuO2 plane. It is shown that a quantitatively consistent explanation of ρab and ρc can be obtained by assuming that, in addition to the normal scattering of electrons by impurities and the electron-electron scattering, there is a strong coupling between the carriers of γ band and the incommensurate spin fluctuations peaked at Qi=(±0.6,±0.6)π/a. In order to test this model, we suggest a pressure-dependent resistivity measurement to be performed.

AB - The normal-state transport properties are investigated for Sr2RuO4 both in and out of the RuO2 plane. It is shown that a quantitatively consistent explanation of ρab and ρc can be obtained by assuming that, in addition to the normal scattering of electrons by impurities and the electron-electron scattering, there is a strong coupling between the carriers of γ band and the incommensurate spin fluctuations peaked at Qi=(±0.6,±0.6)π/a. In order to test this model, we suggest a pressure-dependent resistivity measurement to be performed.

UR - http://www.scopus.com/inward/record.url?scp=85038897890&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.68.012506

DO - 10.1103/PhysRevB.68.012506

M3 - Article

AN - SCOPUS:85038897890

VL - 68

SP - 1

EP - 4

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 1

M1 - 012506

ER -