Evidence for segregation of Te in Ge2 Sb2 Te5 films: Effect on the "phase-change" stress

L. Krusin-Elbaum*, C. Cabral, Kuan-Neng Chen, M. Copel, D. W. Abraham, K. B. Reuter, S. M. Rossnagel, J. Bruley, V. R. Deline

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

103 Scopus citations


The authors present direct evidence for Te segregation to the grain boundaries in chalcogenide Ge2 Sb2 Te5 films by using transmission electron microscopy scans with a 0.5 nm diameter focused probe. This finding is consistent with the observed impeded grain growth and with the post-transition relief of a "spikelike" stress, fully to the pretransition level. Te motion shows up in void formation below 200 °C, a pileup of Te at the surface and its loss at higher (above 400 °C) temperatures. Tuning the driving force for this segregation may be key for the optimal phase-change material design.

Original languageEnglish
Article number141902
JournalApplied Physics Letters
Issue number14
StatePublished - 16 Apr 2007

Fingerprint Dive into the research topics of 'Evidence for segregation of Te in Ge2 Sb2 Te5 films: Effect on the "phase-change" stress'. Together they form a unique fingerprint.

Cite this