Evidence for capture of holes into resonant states in boron-doped silicon

Shun-Tung Yen*, V. N. Tulupenko, E. S. Cheng, P. K. Chung, C. P. Lee, A. T. Dalakyan, K. A. Chao

*Corresponding author for this work

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Abstract

The variation of hole population in the resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved step-scan far-infrared spectroscopy. From the variation of the p3/2 absorptions, we find that the hole population in the ground state decreases continuously with the sequential electric pulses, as a result of the breakdown delay and hole accumulation in long-lived excited states. The measured time-varying spectra of the p1/2 series have been analyzed and attributed to a significant variation of the hole population in the resonant states. We have also observed a new absorption line at 676 cm-1 which is probably caused by the electric-field induced mixing of the resonant states.

Original languageEnglish
Pages (from-to)4970-4975
Number of pages6
JournalJournal of Applied Physics
Volume96
Issue number9
DOIs
StatePublished - 1 Nov 2004

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    Yen, S-T., Tulupenko, V. N., Cheng, E. S., Chung, P. K., Lee, C. P., Dalakyan, A. T., & Chao, K. A. (2004). Evidence for capture of holes into resonant states in boron-doped silicon. Journal of Applied Physics, 96(9), 4970-4975. https://doi.org/10.1063/1.1795985