Evidence for a Very Small Tunneling Effective Mass (0.03m(0)) in MOSFET High-k (HfSiON) Gate Dielectrics

Ming-Jer Chen, Chih-Yu Hsu

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We have recently conducted experimental and modeling tasks on TaC/HfSiON/SiON n-type MOSFETs, leading to an effective mass of 0.03m(0) for 2-D electrons tunneling in high-k HfSiON dielectrics. In this letter, we present extra evidence obtained from complementary MOSFETs undergoing the same TaC/HfSiON/SiON processing, which shows that such a very small tunneling effective mass is existent not only for 3-D electrons but also for 2-D holes. This new finding is very important because it can substantially enhance the current understanding of gate tunneling leakage suppression in metal-gate high-k MOSFETs.
Original languageEnglish
Pages (from-to)468-470
Number of pages3
JournalIEEE Electron Device Letters
Volume33
Issue number4
DOIs
StatePublished - Apr 2012

Keywords

  • Effective mass; effective oxide thickness (EOT); HfO2; HfSiON; high-k; metal gate; MOSFETs; tunneling

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