Evaluation of transient voltage collapse write-assist for GeOI and SOI FinFET SRAM cells

Vita Pi Ho Hu, Ming Long Fan, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper evaluates the impacts of Transient Voltage Collapse (TVC) Write-Assist on the GeOI and SOI FinFET SRAM cells with global and local random variations. With the TVC Write-Assist, the Write-ability and variation tolerance of GeOI and SOI FinFET SRAM cells are improved. The temperature dependence of data retention time is different between the GeOI and SOI FinFET SRAM cells. The maximum TVC Write-Assist pulse width constrained by the data retention failure is smaller in the GeOI FinFET SRAMs at 25°C and becomes comparable at 125°C compared with the SOI FinFET SRAMs.

Original languageEnglish
Title of host publication2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
PublisherIEEE Computer Society
ISBN (Print)9781479913602
DOIs
StatePublished - 1 Jan 2013
Event2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013 - Monterey, CA, United States
Duration: 7 Oct 201310 Oct 2013

Publication series

Name2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013

Conference

Conference2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
CountryUnited States
CityMonterey, CA
Period7/10/1310/10/13

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