Evaluation of strain distribution in SiGe nanoshells/Si created by proximal Ge nanospheres using nanobeam electron diffraction

Chia Tsong Chen, Kang Ping Peng, Horng Chih Lin, Tom George, Pei Wen Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the evaluation of 3-dimensional strain distribution in self-aligned SiGe nanoshells that were created by the Ge nanospheres (NPs) penetrating into the Si substrate using a novel selective oxidation of SiGe nanopillars approach. The Ge content and strain distribution in the shell-shaped SiGe nanosheet appear to have a monotonic increase with the depth of penetration of Ge NPs into the Si layer, which are controlled by the thermal oxidation process.

Original languageEnglish
Title of host publication2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages443-445
Number of pages3
ISBN (Electronic)9781538665084
DOIs
StatePublished - Mar 2019
Event2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 - Singapore, Singapore
Duration: 12 Mar 201915 Mar 2019

Publication series

Name2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019

Conference

Conference2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019
CountrySingapore
CitySingapore
Period12/03/1915/03/19

Keywords

  • channel engineering and strain engineering
  • SiGe nanosheet

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    Chen, C. T., Peng, K. P., Lin, H. C., George, T., & Li, P. W. (2019). Evaluation of strain distribution in SiGe nanoshells/Si created by proximal Ge nanospheres using nanobeam electron diffraction. In 2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 (pp. 443-445). [8731021] (2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2019.8731021