Evaluation of RF and logic performance for 40 nm InAs/InGaAs composite channel HEMTs for high-speed and low-voltage applications

Chien Ying Wu*, Heng-Tung Hsu, Chien I. Kuo, Edward Yi Chang, Yu Lin Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

The DC and RF performances of 40 nm high electron mobility transistors (HEMTs) with composite channel of InAs channel and In0.53Ga 0.47As sub-channel were demonstrated. The drain current was 870 mA/mm (Vds=0.4V, Vgs=0V) and maximum gm was 1750 mS/mm (Vds=0.5V, V gs=-0.65V). The devices showed high current gain cutoff frequency (fT) of 420 GHz and low gate delay time of 0.77 ps owing to the nanometer gate length and extremely high electron mobility of the InAs channel. Under low DC power consumption; these InAs HEMTs still exhibited excellent RF and logic performance which indicates these devices have great potential for future high-speed and low-voltage applications.

Original languageEnglish
Title of host publicationProceedings of 2008 Asia Pacific Microwave Conference, APMC 2008
DOIs
StatePublished - 1 Dec 2008
Event2008 Asia Pacific Microwave Conference, APMC 2008 - Hong Kong, China
Duration: 16 Dec 200820 Dec 2008

Publication series

NameProceedings of 2008 Asia Pacific Microwave Conference, APMC 2008

Conference

Conference2008 Asia Pacific Microwave Conference, APMC 2008
CountryChina
CityHong Kong
Period16/12/0820/12/08

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