Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cells

Pi-Ho Hu, Ming Long Fan, Pin Su, Ching-Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper evaluates the impacts of Read- and Write-Assist circuits on the GeOI FinFET 6T SRAM cells compared with the SOI counterparts. The Word-Line Under-Drive (WLUD) Read-Assist is more efficient to improve the Read Static Noise Margin (RSNM) and Read VMIN of FNSP GeOI FinFET SRAM cells compared with the SOI counterparts. GeOI FinFET SRAM cells with WLUD show smaller cell Read access-time compared with the SOI FinFET SRAM cells at both 25°C and 125 °C. Negative Bit-Line (NBL) Write-Assist is more efficient to improve the Write Static Noise Margin (WSNM) than VCS (cell supply) lowering for both GeOI and SOI FinFET SRAM cells. NBL Write-Assist shows larger WSNM improvement for GeOI FinFET SRAM cells than the SOI counterparts at 125°C.

Original languageEnglish
Title of host publication2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1122-1125
Number of pages4
ISBN (Print)9781479934324
DOIs
StatePublished - 1 Jan 2014
Event2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 - Melbourne, VIC, Australia
Duration: 1 Jun 20145 Jun 2014

Publication series

NameProceedings - IEEE International Symposium on Circuits and Systems
ISSN (Print)0271-4310

Conference

Conference2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014
CountryAustralia
CityMelbourne, VIC
Period1/06/145/06/14

Keywords

  • GeOI FinFET
  • Read-Assist
  • SRAM
  • Static Noise Margin
  • Write-Assist

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