Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications

Chang Hung Yu, Ming Long Fan, Kuan Chin Yu, Vita Pi Ho Hu, Pin Su*, Ching Te Chuang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

For the first time, we comprehensively evaluate 6T SRAM stability and performance using monolayer and bilayer transition metal dichalcogenide (TMD) devices based on the ITRS 2028 (5.9 nm) node. Our study indicates that, with excellent device electrostatics and superior stability, the monolayer TMD is favored for low-power SRAM applications, while the bilayer TMD, with higher carrier mobility, is more suitable for relaxed channel length and high-performance SRAM applications.

Original languageEnglish
Article number7358123
Pages (from-to)625-630
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume63
Issue number2
DOIs
StatePublished - 7 Dec 2015

Keywords

  • 2-D materials
  • Bilayer
  • Monolayer
  • SRAM cell
  • Transition metal dichalcogenide (TMD)

Fingerprint Dive into the research topics of 'Evaluation of monolayer and bilayer 2-D transition metal dichalcogenide devices for SRAM applications'. Together they form a unique fingerprint.

Cite this