Evaluation of interfacial state density of MOS capacitor with three-dimensional channel by conductance method

W. Li, K. Nakajima, C. Dou, K. Kakushima, P. Ahmet, A. Nishiyama, N. Sugii, K. Tsutsui, Y. Kataoka, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An investigation of interface state density of a MOS capacitor with three-dimensional Si surface has been conducted by conductance method. Through comparison with planar devices with (100) and (110) oriented surfaces, the conductance spectra of the 3D surfaces have been explained.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2012, CSTIC 2012
Pages1275-1279
Number of pages5
Edition1
DOIs
StatePublished - 2012
EventChina Semiconductor Technology International Conference 2012, CSTIC 2012 - Shanghai, China
Duration: 18 Mar 201219 Mar 2012

Publication series

NameECS Transactions
Number1
Volume44
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceChina Semiconductor Technology International Conference 2012, CSTIC 2012
CountryChina
CityShanghai
Period18/03/1219/03/12

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