Evaluation of Cu-bumps with lead-free solders for flip-chip package applications

Kung Liang Lin, Edward Yi Chang*, Lin Chi Shih

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


Low cost electroplated Cu-bump with environmental friendly Sn solder was developed for flip-chip applications. The seed layer used was Ti/WNx/Ti/Cu where WNx was used as the Cu diffusion barrier and Ti was used to enhance the adhesion between bump and the chip pad. Thick negative photoresist (THB JSR-151N) with a high aspect ratio of 2.4 was used for electroplating of copper bump and Sn solder. The Sn solder cap was reflowed at 225° for 6 min at N2 atmosphere. No wetting phenomenon was observed for the Sn solder as evaluated by energy-dispersed spectroscopy (EDS). The Cu-bump with Ti/WNx/Ti/Cu seed layer not only have higher shear force than the Cu-bump with Ti/Cu seed layer but also has higher resistance to fatigue failure than the Au, SnCu, SnAg bumps.

Original languageEnglish
Pages (from-to)2392-2395
Number of pages4
JournalMicroelectronic Engineering
Issue number12
StatePublished - 1 Dec 2009


  • Copper bump
  • Electroplating
  • Lead-free

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