Abstract
Low cost electroplated Cu-bump with environmental friendly Sn solder was developed for flip-chip applications. The seed layer used was Ti/WNx/Ti/Cu where WNx was used as the Cu diffusion barrier and Ti was used to enhance the adhesion between bump and the chip pad. Thick negative photoresist (THB JSR-151N) with a high aspect ratio of 2.4 was used for electroplating of copper bump and Sn solder. The Sn solder cap was reflowed at 225° for 6 min at N2 atmosphere. No wetting phenomenon was observed for the Sn solder as evaluated by energy-dispersed spectroscopy (EDS). The Cu-bump with Ti/WNx/Ti/Cu seed layer not only have higher shear force than the Cu-bump with Ti/Cu seed layer but also has higher resistance to fatigue failure than the Au, SnCu, SnAg bumps.
Original language | English |
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Pages (from-to) | 2392-2395 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 86 |
Issue number | 12 |
DOIs | |
State | Published - 1 Dec 2009 |
Keywords
- Copper bump
- Electroplating
- Lead-free