Evaluation of analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs

Hung Yi Lee, Chang Hung Yu, Pin Su, Ching Te Chuang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We investigate the analog performance of monolayer and bilayer two-dimensional transition metal dichalcogenide (TMD) MOSFETs. The device analog metrics including the transconductance (g m ), output resistance (R o ) and intrinsic gain (g m × R o ) for TMD device are investigated using 3D atomistic TCAD simulations. It is shown that bilayer TMD devices exhibit better analog performance compared with monolayer TMD devices. The impacts of different mobility ratios of bilayer TMD devices to monolayer TMD devices are examined.

Original languageEnglish
Title of host publication2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509058051
DOIs
StatePublished - 7 Jun 2017
Event2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017 - Hsinchu, Taiwan
Duration: 24 Apr 201727 Apr 2017

Publication series

Name2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017

Conference

Conference2017 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2017
CountryTaiwan
CityHsinchu
Period24/04/1727/04/17

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