Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

Yu Sheng Chiu, Quang Ho Luc, Yueh Chin Lin, Jui Chien Huang, Chang Fu Dee, Burhanuddin Yeop Majlis, Edward Yi Chang

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Engineering & Materials Science

Physics & Astronomy