EUV degradation of high performance Ge MOSFETs

Y. T. Chen, H. C. Chang, I. S. Wong, C. M. Lin, H. C. Sun, H. J. Ciou, W. T. Yeh, S. J. Lo, C. W. Liu, Chen-Ming Hu, Fu Liang Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High energy 13.5 nm EUV (∼92 eV) induced Ge MOSFET degradation is reportedly for the first time. The degradation of threshold voltage, subthreshold swing, and channel mobility is attributed to the generation of interface traps and oxide fixed charges. Much more severe degradation of S.S. on nFETs as compared to pFETs suggests that acceptor type D it in the upper half of Ge bandgap are generated by EUV radiation. ΔQ it may originate from the dangling bonds at interface. Positive ΔQ f is due to the fixed charges of oxygen vacancy. The generation of bulk defects in Ge increases the drain leakage current, leading to the reduction of current on/off ratio.

Original languageEnglish
Title of host publication2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
DOIs
StatePublished - 12 Aug 2013
Event2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 - Hsinchu, Taiwan
Duration: 22 Apr 201324 Apr 2013

Publication series

Name2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013

Conference

Conference2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013
CountryTaiwan
CityHsinchu
Period22/04/1324/04/13

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    Chen, Y. T., Chang, H. C., Wong, I. S., Lin, C. M., Sun, H. C., Ciou, H. J., Yeh, W. T., Lo, S. J., Liu, C. W., Hu, C-M., & Yang, F. L. (2013). EUV degradation of high performance Ge MOSFETs. In 2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013 [6545603] (2013 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2013). https://doi.org/10.1109/VLSI-TSA.2013.6545603